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RB495D
Diodes
Shottky barrier diode
RB495D
Application General rectification. External dimensions (Unit : mm) Lead size figure (Unit : mm)
1.9
2.90.2 Each lead has same dimension 0.15 0.06
2.80.2
1.60.1
Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability.
0.4 0.1
0.05
0.2
1.0MIN.
(3)
0.95
00.1 0.30.6
0.8MIN.
(2)
(1) 0.95 1.90.2
0.80.1 1.10.2 0.01
SMD3
Structure Silicon epitaxial planar
0.95
Structure
ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.50.1 0 1.750.1 0.30.1
3.50.05
8.00.2
3.20.1
3.20.1
4.00.1
1.05MIN
00.5
5.50.2
3.20.1 1.350.1
Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz1cyc) Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 40 25 0.4 2 125 -40 to +125
Unit V V A A
(*1)Rating of per diodeIo/2
Electrical characteristics (Ta=25C) Parameter Symbol
Forward voltage Reverse current
VF1 VF2 IR1
Min. -
Typ. -
Max. 0.30 0.50 70
Unit V V A
Conditions IF=10mA IF=200mA VR=25V
Rev.B
2.4
0.1
1/3
RB495D
Diodes
Electrical characteristic curves (Ta=25C)
1 Ta=75
REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A)
100000 Ta=125 10000 1000 100 10 1 0.1 0 100 200 300 400 500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 20 25 30 35 40
REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS
100
f=1MHz
Ta=125 0.1 Ta=25 Ta=-25 0.01
Ta=75 Ta=25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10
Ta=-25
0.001
1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
380
FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA)
200
Ta=25 IF=200mA n=30pcs
180 160 140 120 100 80 60 40 20 0
AVE:33.62uA
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
370 360 350 340 AVE:359.0mV 330
Ta=25 VR=25V n=30pcs
100 95 90 85 80 75 70 65 60 55 50 AVE:71.8pF Ta=25 f=1MHz VR=0V n=10pcs
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
30
RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A)
30
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 1cyc 8.3ms
20 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm
25 20 15 10 5
25 20 15 10 5 AVE:8.6ns 0
15
8.3ms 8.3ms 1cyc
10
5
AVE:12.50A 0
0 1
trr DISPERSION MAP
IFSM DISRESION MAP
10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
20
TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm
1000 Rth(j-a)
FORWARD POWER DISSIPATION:Pf(W)
0.3 Per chip
15
t
100
Rth(j-c)
0.2
D=1/2
10
Mounted on epoxy board
Sin(180)
DC
10
IM=1mA time
IF=10mA
0.1
5
1ms
300us
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
1 0.001
0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 0.5
Rev.B
2/3
RB495D
Diodes
1 Per chip 0.5 Per chip 0.4 DC 0.3 D=1/2 0.2 0.1 0 0 10 20 30 40 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125 0A 0V Io t T VR D=t/T VR=20V Tj=125 0.5 Per chip 0.4 DC 0.3 D=1/2 0.2 0.1 0 0 25 50 75 100 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 125 T 0A 0V Io t VR D=t/T VR=20V Tj=125
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.6 D=1/2 0.4 0.2 0 DC Sin(180)
Sin(180)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.8
REVERSE POWER DISSIPATION:PR (W)
Sin(180)
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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